其他null检测 | 纳秒激光干涉法进行不定形硅结晶化实验研究-北京欧兰科技发展有限公司

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应用领域	半导体
检测样本	其他
检测项目
参考标准	暂无

采用立陶宛Ekspla公司的NL303G型激光器的基频1064nm，10Hz输出重复频率，利用分光技术分成两束，然后在一个2X2平方毫米的区域内形成强度周期性变化的干涉条纹，并利用这一光束进行不定形硅的结晶化处理。

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配置单

NL300系列高能量电光调Q激光器
型号：NL300

¥50万 - 100万
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方案详情

Laser crystallization of a 50‐nm thick amorphous‐Si (a‐Si) thin film on glass substrate was examined by a Nd:YAG (λ = 1064 nm) nanosecond laser and a two‐beam laser interference method. In spite of the low absorption rate of the laser wavelength in the a‐Si, crystallized Si ripple patterns were observed following a single laser pulse irradiation. The atomic force microscope (AFM) measurement revealed that surface ripple arrays are protruded as high as
120 nm at the positions corresponding to the maximum laser intensity and the ripples are composed of narrow double peaks with a separation of 1 μm.Raman image mapping was used to plot the spatial distribution of the crystallized Si phase. It was found that a 1064‐nm‐wavelength nanosecond laser could crystallize an a‐Si thin film into polycrystalline‐Si (poly‐Si) by nonlinear absorption under high laser energy irradiation.

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北京欧兰科技发展有限公司

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