DLTS 深能级瞬态谱 美国Sula-世界最知名品牌，欧美主流150多家大学科研单位的选择

 
Sula Technology - 美国100多家大学科研单位的首选，全球DLTS最权威的供应商！
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DLTS - Deep Level Transient Spectroscopy深能级瞬态谱
 

 
 

• 由Darwin Thusius创立于1982年，已有30年历史

• Ashland, Oregon

• 专注于DLTS技术，目前在美国DLTS供应商中处于独家垄断地位，国际上也很有名

 
 
一．DLTS是什么
 

• DLTS

• Deep Level Transient Spectroscopy

   深能级瞬态谱
 

• 主要用于检测材料中的深能级杂质或缺陷

• 浓度

• 深度分布

• 激活能

• 俘获截面

• 主要优点

• 灵敏度高

• 可以得出很多深能级信息

 
二．深能级
 

• 所有的缺陷或杂质能级都位于禁带中

• 根据位置可以分为两类

• 远离导带底或价带顶

• 激活能一般大于100mV

• 接近于导带底或价带顶

• 激活能一般小于100mV

• 浅能级

• 深能级

• 深能级一般被称之为真正的陷阱中心

• 深能级由于位于禁带中间位置，载流子通过深能级的辅助实现跃迁的几率非常高

• 深能级对于材料和器件性能的影响非常大

 
三．DLTS可测试的样品
 

• DLTS测量的是半导体材料中的空间电荷区(Space Charge Region, SCR)的深能级信息

• 测量样品

• 肖特基势垒，PN结或MOS电容

• Sula Technology DLTS对样品的要求

• 有好的CV或IV特性

• 器件大小：0.5-2mm

• 电容：30-60pf@2V Reverse Bias

• 漏电流：≤100μA@2V Reverse Bias & 500K

• 如果超出以上要求，仍然可以测试，但需要更仔细地准备样品以及对结果进行更多的分析

 
四．优点
 

• 可以检测体和界面缺陷

• 可以测量缺陷浓度、激活能、俘获截面、空间分布、俘获和发射速率等

• 可测样品类型：p-n junctions, Schottky diodes, MOS structures, LEDs, FETs, semiconductor lasers, high-resistivity and semi-insulating materials

• 灵敏度高：体缺陷浓度< 1E9 atoms/cm3

• 测量模式包括: C-V, C-T, I-V, I-T, DLTS, DDLTS, CCDLTS, DDLTS/CCDLTS, CTS, ITS, PICTS, QTS, Fast Pulse Interface, High Voltage Interface & Multiple Correlation.

• 模块化设计，客户可以根据需要添加新的功能

• Proprietary Capacitance Meter： 3&mu;s response time，可以很快地从过载中恢复，且能应对大漏电样品

• 背景电容自动降噪达 60 dB

• 在温度扫描过程中会监测漏电流

• 扫描速度快：可8分钟内扫描100K

• 温度范围：10K to 800K.

• 单个温度扫描可使用不同的率窗同时产生多达8个谱图

 
五．常用的选项（Options）
 

• CTS (Current Transient Spectroscopy)

• QTS (Charge Transient Spectroscopy)

• ITS (Isothermal Transient Spectroscopy)

• PITS (Photo Induced Transient Spectroscopy)

• CCDLTS (Constant Capacitance DLTS)

• Auxiliary Correlators

• Fast Pulse Interface

 
六．DLTS测试原理

 

• 反向偏压UR下的平衡状态    

• 带有深能级陷阱

• 位置低于EF的全部填满

• 位置高于EF的全部未填满   

• 反向偏压UR下，再加填充脉冲U1

• SCR宽度变小

• 部分原位置高于EF的能级现在低于EF

• 这部分深能级陷阱将从导带俘获电子填充自己

• 填充脉冲U1撤除后

• SCR宽度恢复原来的大小

• 前述能级位置发生变化的陷阱现在恢复到原来的位置

• 这部分深能级陷阱需要向导带发射电子以便回到空态状态

 
 
七．设备图
Sula DLTS:10-500K                    Sula DLTS: 77-800K
   
 
 
样品架                             Photo-induced Transient Spectroscopy(带Laser)
     
 
 
 
八．分析案例
 
N-GaAs的CV分析
 
                                      Multiple Correlation of n-GaAs using Capacitance DLTS. Detection of the EL2 Defect
 
Arrhenius Plot of EL2 Peak in n-GaAs        Capacitance DLTS of Conductive SiC
 
 
 
Capacitance Multiple Correlation of ZnO illustrating some Graphic Options
 
Recovery from Noise in Isothermal Capacitance Spectroscopy. Detection of Fe(i) in p-type Si
 
 
Isothermal Charge Spectroscopy (IQTS) of GaN  IQTS of CdTe Solar Cell -negative peaks
 
 
 
 
Standard Resolution IQTS of Semi-insulating (SI) SiC
                                   Standard Resolution IQTS of Semi-insulating (SI) SiC
 
 
High Resolution IQTS of SI SiC

 
 
九．部分客户（全球主要大学科研单位大约100多家科研的选择）
 

• Ames Research Laboratory

• Advanced Micro Devices

• Aerojet Electrosystems

• Aerospace Corporation

• Air Force Institute of Technology

• Anshom University - Egypt

• ANSTO - Australia

• Army Research Laboratory

• Asian Institute for Science & Technology - Japan

• AT&T Bell Laboratories (2)

• Ataturk University - Turkey

• Auburn University

• Bandgap Technology

• Battelle Pacific Northwest Laboratory

• Bechtel Bettis

• BESSY - Germany

• Carnegie Mellon University (2)

• CEA - France

• Centre National Pedagogique - Tunisia

• Chiao Tung University - Taiwan

• City College of New York

• Clemson University

• CNRS - France

• CNET - France

• Colorado State University

• Cornell University

• Corning Corporation

• Cree, Inc.

• CRN - France

• Czech Academy of Sciences - Czech Republic

• Dayton Research Institute

• Dublin City University - Ireland

• ENEA - Italy

• ETSI - Spain

• Ford Motor Company

• Fraunhofer Institute for Solar Energy - Germany

• Gabes Science Faculty - Tunisia

• Gazi University - Turkey

• Hanscom Air Force Base

• Harris Microwave Semiconductor

• Hewlett-Packard

• Hoboken Metallurgie - Belgium

• Honeywell Corporation

• Hong Kong University

• Howard University

• IBM

• IBM - France

• INFN - Italy

• Indian Institute of Technology-Bombay - India

• Indiana University of Pennsylvania

• INRST - Tunisia

• INSA (2) - France

• Institute National des Sciences Appliquess & Technologiques - Tunisia

• Iowa State University

• ISTC Kazakhstan - Russian Federation

• Jet Propulsion Laboratory

• Lawrence-Berkeley Laboratory

• Matra-Harris Semiconductor

• McMaster University - Canada

• Miami University

• Middle Eastern Technical University - Turkey

• MIT - Lincoln Laboratories

• NASA - Lewis Research Center

• NASA - Marshall Space Flight Center

• National Cheng Kung University - Taiwan

• National Formosa University - Taiwan

• National Taiwan University - Taiwan

• Naval Research Laboratory

• New Jersey Institute of Technology

• North Carolina Central University

• North Carolina State University at Raleigh

• North Carolina State University at Charlottesville

• Northrop-Grumman

• Notre Dame University (2)

• NREL (2)

• Oak Ridge National Laboratory

• Ohio University

• Osaka University - Japan

• Phillips Laboratory (2)

• Quaid-I-Azam University - Pakistan

• Rio de Janeiro Federal University - Brasil

• Rensselear Polytechnique Institute

• RIST - Korea

• Rochester Institute of Technology

• Ruder Boskovic Institute - Croatia

• Rutgers University

• St. Petersburg State University - Russia

• Samsung Applied Institute of Technology - Korea

• Sandia National Laboratories (6)

• Semiconductor Physics Institute - Germany

• Shaw University

• Simon Fraser University - Canada

• Sohio Research Center

• Stanford University

• STION, Inc.

• Sumitomo Electric Industries - Japan

• Sun-Yat-Sen University - Taiwan (2)

• SUNY at Albany

• SUNY at Buffalo

• Technical University at Freiberg - Germany

• Texas Instruments

• Texas Tech University

• Texas State University

• Thomson CSF - France

• Triquint Semiconductor Company

• Ultra Dots, Inc.

• University of Bologna - Italy

• University of California at Berkeley

• University of California at Santa Barbara

• University of Catania - Italy

• University of Cologne - Germany

• University of Colorado

• University of Florence - Italy

• University of Florida

• University of Hamburg (2) - Germany

• University of Houston

• University of Karlsruhe - Germany

• University of Marseilles - France

• University of Maryland

• University of Melbourne - Australia

• University of Metz - France

• University of Michigan

• University of Missouri

• University of Montreal - Canada

• University of New Mexico

• University of North Carolina

• University of Paris - France

• University of Puerto Rico - P.R.

• University of Reims - France

• University of Strassbourg - France

• University of Texas at Arlington

• University of Texas at Austin (2)

• University of Tulsa

• University of Wales - United Kingdom

• University of Wisconsin at Madison

• Virginia Commonwealth University

• Virginia Technical University

• Wacker Siltronic

• Washington State University

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