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Sinton少子寿命测试仪
Sinton WCT-120少子寿命测试仪
Sinton少子寿命测试仪简介：
美国Sinton WCT-120少子寿命测试仪器采用了独特的测量和分析技术，包括类似平稳状态photoconductance (QSSPC)测量方法。可灵敏地反映单晶体重金属污染及陷阱效应表面复合效应等缺陷情况。WCT一个高度被看待的研究和过程工具。QSSPC终身测量也产生含蓄的打开电路电压(对照明)曲线，与最后的I-V曲线是可比较的在一个太阳能电池过程的每个阶段。
Sinton WCT-120少子寿命测试仪常见问题：
美国Sinton WCT-120与WT-2000测少子寿命的差异？
WCT用的是Quasi-Steady-State Photoconductance（QSSPC准稳态光电导）而WT2000是微波光电导。
WCT-120准稳态光电导法测少子寿命的原理？
WCT用的是Quasi-Steady-State Photoconductance（QSSPC准稳态光电导）
准稳态光电导衰减法（QSSPC）和微波光电导衰减法（MWPCD）的比较：
QSSPC方法优越于其他测试寿命方法的一个重要之处在于它能够在大范围光强变化区间内对过剩载流子进行绝对测量，同时可以结合 SRH模型，得出各种复合寿命，如体内缺陷复合中心引起的少子复合寿命、表面复合速度等随着载流子浓度的变化关系。
MWPCD方法测试的信号是一个微分信号，而QSSPC方法能够测试少子寿命的真实值，MWPCD在加偏置光的情况下，结合理论计算可以得出少子寿命随着过剩载流子的变化曲线，而QSSPC直接就能够测得过剩载流子浓度，因此可以直接得出少子寿命与过剩载流子浓度的关系曲线，并且得到PN结的暗饱和电流密度；MWPCD由于使用的脉冲激光的光斑可以做到几个到十几个，甚至更小的尺寸，在照射过程中，只有这个尺寸范围的区域才会被激发产生光生载流子，也就是得到的结果是局域区域的差额寿命值，这对于寿命分布不均匀的样品来说，结果并不具备代表性。
Sinton WCT-120少子寿命测试仪性能参数：
1. 测量原理 QSSPC（准稳态光电导）
2. 少子寿命测量范围 100 ns-10 ms
3. 测试模式：QSSPC,瞬态，寿命归一化分析
4. 电阻率测量范围 3–600 (undoped) Ohms/sq.
5. 注入范围：1013-1016cm-3
6. 感测器范围 直径40-mm
7. 测量样品规格 标准直径: 40–210 mm （或更小尺寸）
8. 硅片厚度范围 10–2000 μm
9. 外界环境温度 20°C–25°C
10. 功率要求 测试仪: 40 W 电脑控制器：200W 光源：60W
11. 通用电源电压 100–240 VAC 50/60 Hz
Sinton WCT-120少子寿命测试仪主要特点:
适应低电阻率样片的测试需要，最小样品电阻率可达0.1ohmcm
全自动操作及数据处理
对太阳能级硅片，测试前一般不需钝化处理
能够测试单晶或多晶硅棒、片或硅锭
可以选择测试样品上任意位置
能提供专利的表面化学钝化处理方法
对各道工序的样品均可进行质量监控：
硅棒、切片的出厂、进厂检查
扩散后的硅片
表面镀膜后的硅片以及成品电池
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少子寿命测试仪成功使用用户？
服务众多光伏用户：
江苏，上海，北京，浙江，西安，四川，河北，河南等地的硅料生产企业及半导体光伏拉晶企业等等。
Best available calibrated measurement of carrier recombination lifetime. Widely used for both monocrystalline and multicrystalline wafers.
Product Overview
WCT testers showcase our unique measurement and analysis techniques, including the highly regarded Quasi-Steady-State Photoconductance (QSSPC) lifetime measurement method developed by Sinton Instruments in 1994.
The QSSPC technique is ideal for monitoring multicrystalline wafers, dopant diffusions, and low-lifetime samples. This method complements the use of the transient photoconductance technique that is also standard on this instrument.
The QSSPC lifetime measurement also yields the implied open-circuit voltage (versus illumination) curve, which is comparable to an I-V curve at each stage of a solar cell process.
WCT System Capabilities
Primary application:
Step-by-step monitoring and optimization of a fabrication process.
Other applications:
Sinton Instruments' analysis yields a calibrated carrier injection level for each wafer, so you can interpret lifetime data in a physically precise way. Specific parameters of interest are displayed and logged for each measurement.
? Monitoring initial material quality
? Detecting heavy metals contamination during wafer processing
? Evaluating surface passivation and emitter dopant diffusion
? Evaluating process-induced shunting using the implied I-V measurement
Further Information
技术参数：
FAQ:
? What is the recombination lifetime?
? How does the solar cell efficiency depend on the lifetime?
? What determines the lifetime in silicon?
? How is lifetime measured by the Sinton Instruments tools?
? How is the data analyzed?
? Can you measure surface recombination velocity?
? Does the system measure emitter saturation current density?
? Can wafers be measured with no surface passivation (“out of the box”)?
? Can any of these instruments do lifetime maps?
? How do these measurements compare to microwave PCD?
? What lifetimes can be measured?
? What is the smallest sample size?
? How do you measure bulk lifetime on blocks or ingots?
? At what carrier density should I report the result?
? Can the lifetime tester be used to detect Fe contamination?
? How is the instrument calibrated?
? When should wafers be tested inline?
? Does the lifetime tester measure the trapping?
Module and Cell Flash Testers frequently asked questions
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