Mapping Semiconductor Devices in the SEM

2020/06/15   下载量： 2 次

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Introduction Application Note As semiconductor devices continue to decrease in size to improve performance and take advantage of advances in fabrication techniques, there is a need to analyse both their structure and chemistry at ever increasing resolution. Typically this requires the use of TEM for metrology and failure analysis. Using ultrahigh resolution FEG-SEM, low kV imaging and the new X-Max® Extreme EDS detector we demonstrate the ability to retain some of this high resolution analysis in the SEM. This allows for better targeting of resources and increased throughput of analysis.

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Introduction

Application Note

As semiconductor devices continue to decrease in size to improve performance and take advantage of

advances in fabrication techniques, there is a need to analyse both their structure and chemistry at ever

increasing resolution. Typically this requires the use of TEM for metrology and failure analysis. Using ultrahigh

resolution FEG-SEM, low kV imaging and the new X-Max® Extreme EDS detector we demonstrate

the ability to retain some of this high resolution analysis in the SEM. This allows for better targeting of

resources and increased throughput of analysis.


上一篇 一文了解 EDS 能谱技术发展历程
下一篇 Analysing a NAND Flash memory device using low kV EDS

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牛津仪器科技（上海）有限公司
白金会员 丨 第23年
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