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2008/11/06

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1.
http://www.nstl.gov.cn/index.html
【正题名】:Gallium nitride nanowires: Synthesis, resonant electromechanical properties, ion beam disorder effect on contact conduction, and heterojunction fabrication.
　　　　【作者】:Nam, Chang-Yong.
　　【作者单位】:University of Pennsylvania.
　【学位授予年】:2007
　【论文集名称】:Dissertation Abstracts International
　　　　【卷期】:vol.68-04B.
　　　　【页码】:p.2590
　　　
2. http://www.nstl.gov.cn/index.html
【正题名】:Synthesis and characterization of gallium nitride and zinc germanium nitride.
　　　　【作者】:Bekele, Challa.
　　【作者单位】:Case Western Reserve University.
　【学位授予年】:2007
　【论文集名称】:Dissertation Abstracts International
　　　　【卷期】:vol.67-11B.
　　　　【ISBN】:9780542967
　　　　【页码】:p.6455

3。
http://www.springerlink.com/content/?k=GaN

Catalyst-free growth of GaN nanowires
K. A. Bertness, N. A. Sanford, J. M. Barker, J. B. Schlager, A. Roshko, A. V. Davydov and I. Levin
Abstract We have grown GaN and AlGaN nanowires on Si (111) substrates with gassource molecular beam epitaxy...
Journal of Electronic Materials, Volume 35, Number 4 / 2006年4月
4．http://www.springerlink.com/content/?k=GaN&sortorder=asc&o=20

Synthesis of aligned GaN nanorods on Si (111) by molecular beam epitaxy
Y.H. Kim, J.Y. Lee, S.-H. Lee, J.-E. Oh and H.S. Lee
Straight and well-aligned GaN nanorods have been successfully synthesized by molecular beam epitaxy (MBE) method. The...
Applied Physics A: Materials Science & Processing, Volume 80, Number 8 / 2005年5月

5．　http://www.nstl.gov.cn/index.html

【正题名】:Hydride vapor phase epitaxy of semipolar gallium nitride.
　　　　【作者】:Baker, Troy Jonathan.
　　【作者单位】:University of California, Santa Barbara.
　【学位授予年】:2006
　【论文集名称】:Dissertation Abstracts International
　　　　【卷期】:vol.67-09B.
　　　　【ISBN】:9780542863
　　　　【页码】:p.5334

6。http://www.springerlink.com/content/?k=GaN&sortorder=asc&o=30

GaN single crystals grown on HVPE seeds in alkaline supercritical ammonia
M. Callahan, B.-G. Wang, K. Rakes, D. Bliss, L. Bouthillette, M. Suscavage and S.-Q. Wang
...of techniques similar to those used in hydrothermal growth. Retrograde solubility of GaN greater than 5% by weight using group I amides as mineralizers is...
Journal of Materials Science, Volume 41, Number 5 / 2006年3月

dong3626 2008/11/06

[img]http://www.instrument.com.cn/bbs/images/affix.gif[/img][url=http://www.instrument.com.cn/bbs/download.asp?ID=116824]5.Hydride vapor phase epitaxy of semipolar gallium nitride[/url]

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