【序号】:3 【作者】:M. Ayman Shibib 【书名】:Inclusion of degeneracy in the analysis of heavily doped regions in silicon solarcells and other semiconductor devices 【期刊】:Solar Cells 【年、卷、期、起止页码】:Volume 3, Issue 1, February 1981, Pages 81–85 【全文链接】:http://www.sciencedirect.com/science/article/pii/0379678781900855
【序号】:5 【作者】:D.H.J. Totterdell 【题名】:Application of open circuit voltage decay to the characterisation of heavydoping parameters in a p+ emitter of a junction diode 【期刊】:Solid-State Electronics 【年、卷、期、起止页码】: Volume 33, Issue 7, July 1990, Pages 793–798 【全文链接】:http://www.sciencedirect.com/science/article/pii/003811019090057L