【序号】：1 【作者】：Schaeffer, J. K. Samavedam, S. B. Gilmer, D. C. Dhandapani, V. Tobin, P. J. Mogab, J. Nguyen, B.-Y. White, B. E. Dakshina-Murthy, S. Rai, R. S. Jiang, Z.-X. Martin, R. Raymond, M. V. Zavala, M. La, L. B. Smith, J. A. Garcia, R. Roan, D. Kottke, M. Gregory, R. B. 【题名】：Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics 【期刊】：Journal of Vacuum Science & Technology B 【年、卷、期、起止页码】：2003，Volume 21 / Issue 1 【全文链接】：http://link.aip.org/link/doi/10.1116/1.1529650
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