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  • 1

    【题名】:Growth Optimization, Strain Compensation andStructure Design of InAs/GaSb Type-II Superlattices for Mid-Infrared Imaging

    【作者】:Yuxin Song, Shumin Wang

    【期刊名全称】:Chemistry & Materials Science

    【文献页码】:Vol.2 No.2, June 2013 pp.46-56

    【全文链接】: http://www.scirp.org/journal/PaperInformation.aspx?PaperID=33271

    2

    【题名】:Reduction of surface leakage current in InAs/GaSbstrained layer long wavelength superlattice detectors using SU-8 passivation

    【作者】:H. S. Kim, E. Plis, N. Gautam, S. Myers, Y. Sharma

    【期刊名全称】:Applied Physics Letters

    【文献页码】:Appl. Phys. Lett. 97, 143512 (2010)

    【全文链接】: http://apl.aip.org/resource/1/applab/v97/i14/p143512_s1?isAuthorized=no

    3

    【题名】:Background carrier concentration in midwave andlongwave InAs/GaSb type II superlattices on GaAs substrate

    【作者】:A. Khoshakhlagh, F. Jaecke

    【期刊名全称】:Applied Physics Letters

    【文献页码】:Appl. Phys.Lett. 97, 051109 (2010)

    【全文链接】:http://apl.aip.org/resource/1/applab/v97/i5/p051109_s1?isAuthorized=no

    4

    【题名】:Effect of interfacial bonding on the structural andvibrational properties of InAs/GaSb superlattices

    【作者】:N. Herres, F.Fuchs, J. Schmitz

    【期刊名全称】:Physical Review B

    【文献页码】:Phys. Rev. B 53,15688–15705 (1996)

    【全文链接】:http://prb.aps.org/abstract/PRB/v53/i23/p15688_1

    5

    【题名】:Optimization of InAs/GaSb type-II superlatticeinterfaces for long-wave (8 μm) infrareddetection

    【作者】:A. Khoshakhlagh,, E. Plis

    【期刊名全称】:Journal of Crystal Growth

    【文献页码】:Volume 311,Issue 7, 15 March 2009, Pages 1901–1904

    【全文链接】:http://www.sciencedirect.com/science/article/pii/S0022024808012402

yilai1002 2013/06/29

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