电子元器件产品null检测 | 掺杂CI的CuI近边带发射增强-北京欧兰科技发展有限公司

方案摘要

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应用领域	电子/电气
检测样本	电子元器件产品
检测项目
参考标准	暂无

采用立陶宛EKSPLA生产的PL3140型10皮秒脉冲宽度，351nm波长的激光作光源激掺杂CI的CuI样品。用条纹相机测量样品近边带光发射的衰减弛豫时间。结果表明CI掺杂可以有效提高增强近边带发射强度，同时不影响其快速衰减特性。有助于研发快速响应闪烁体材料。

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配置单

PL3140 皮秒Nd:YLF激光器
型号：PL3140

¥50万 - 100万
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方案详情

CuI is a promising candidate for scintillation devices due to the ultrafast decay time of 130 ps at room temperature. The photoluminescence of CuI is composed of the near-band-edge emission (fast decay) and the deeplevel emission (slow decay). Unfortunately, the fast component is much weaker than the slow component. The effect of Cl doping on the fast and slow components is investigated in this paper to improve the luminescent and scintillating properties. X-ray diffraction patterns show that Cl ions are successfully doped into CuI lattice for low concentration (< 10 mol%), whereas the CuCl phase is formed for high concentration. The Cl doping forms isoelectronic bound excitons and enhance near-band-edge emission and suppress the deep-level emission, which is demonstrated to be stable for long time. Furthermore, the near-band-edge emission decay times of CuI hardly change with Cl doping.

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