产品名称: | Si+Si3N4薄膜(进口料Silicon Nitride Film (PE-CVD) on Front Polished Side of Silicom Wafer P type doped B) |
常规尺寸: | dia 4" +/- 0.5 mm x 0.525 +/- 0.025 mm |
标准包装:
技术参数:
| 1000级超净室100级超净袋真空包装、单片盒或插盒 |
Si参数:
| 晶向:<100>±0.5°; |
掺杂类型:P型掺B; | |
电阻率:<0.02 ohm-cm; | |
抛光:单抛; | |
Si3N4参数:
| 生长方法:low stress PE-CVD method |
薄膜厚度:100nm +/- 8% | |
镀膜情况:Si3N4 covers front polished side of Silicon wafer ONLY |
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