【求助】（还剩3和6）求助9篇中英文论文－非常感谢

kxin

2009/04/30

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悬赏金额:135积分状态:已解决

1.

【作者】：毛联波乔艳冰戴文君李佑俊廖家德钟德镇简廷宪
【题名】：一种用于增加制程范围的新型FFS液晶显示器件结构
【期刊】：现代显示
【年、卷、期】：2008年4期
2.
【作者】：Moon, S.; Kim, K.; Yoo, J.; Park, J.; Kim, D.; Chakrabarty, K.; Lee, S.; Yi, J.
【题名】：N2 plasma treatment effects in silicon nitride film formation for silicon surface passivation
【期刊】：Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

【年、卷、期】：Volume 1, Issue , 11-18 May 2003 Page(s): 102 - 105 Vol.1

3.
【作者】：WASHIZUKA ISAMU(Sharp Corp.) YABUTA SATOSHI(Sharp Corp.) OKAMOTO MASAYA(Sharp Corp.)
【题名】：Plasma Treatment Effect on the Off Current Characteristics of a-Si Thin Film Transistor.
【期刊】：Journal of the Surface Finishing Society of Japan
【年、卷、期】：VOL.50;NO.3;PAGE.273-277(1999)

4.

【作者】：S. Yamakawa, S. Yabuta, A. Ban, M. Okamoto, M. Katayama, Y. Ishii, and M. Hijikigawa
【题名】：Plasma Treatment Effect on the Off Current Characteristics of a-Si TFT
【期刊】：SID Symposium Digest of Technical Papers
【年、卷、期】： May 1998 -- Volume 29, Issue 1, pp. 443-446

5.
【作者】：Kang, S. G.; Bae, S. C.; Choi, S. Y.
【题名】：The effect of back channel hydrogen plasma treatment on the electrical characteristics of amorphous thin film transistors
【期刊】：Applied Physics Letters
【年、卷、期】：Volume 77, Issue 8, id. 1188 (2000)

6.
【作者】：WU CHUAN-YI
【题名】：Effect of Interface Plasma Treatments on the Electrical Properties of a-Si:H TFTs
【期刊】：Proc Int Disp Workshops
【年、卷、期】：VOL.12th;NO.Vol.2;PAGE.1085-1088(2005)

7.
【作者】：Chen, J.H.; Huang, T.H.; Chen, Y.E.
【题名】：A BCE-type a-Si TFT with an island metal masking structure【期刊】：Information Display, 1999. ASID apos;99. Proceedings of the 5th Asian Symposium on
【年、卷、期】：Volume , Issue , 1999 Page(s):277 - 280

8.
【作者】：Lee, K.Y.; Fang, Y.K.; Chen, C.W.; Hwang, K.C.; Liang, M.S.; Wuu, S.G.
【题名】：To suppress UV damage on the subthreshold characteristic of TFTduring hydrogenation for high density TFT SRAM
【期刊】：Electron Device Letters, IEEE
【年、卷、期】：Volume 18, Issue 1, Jan 1997 Page(s):4 - 6

9.
【作者】：Wehrspohn, R. B.; Deane, S. C.; French, I. D.; Gale, I.; Hewett, J.; Powell, M. J.; Robertson, J.
【题名】：Relative importance of the Si-Si bond and Si-H bond for the stability of amorphous silicon thin film transistors
【期刊】：Journal of Applied Physics
【年、卷、期】：Volume 87, Issue 1, pp. 144-154 (2000)

zhumenjun1984 2009/04/30

9 [img]https://www.instrument.com.cn/bbs/images/affix.gif[/img][url=http://www.instrument.com.cn/bbs/download.asp?ID=147407]Relative importance of the Si-Si bond and Si-H bond for the stability of amorphous silicon thin film transistors[/url]

dong3626 2009/04/30

[img]https://www.instrument.com.cn/bbs/images/affix.gif[/img][url=http://www.instrument.com.cn/bbs/download.asp?ID=147447]8.To suppress UV damage on the subthreshold characteristic of TFTduring hydrogenation for high density TFT SRAM[/url]

灰米奇 2009/04/30

1. [img]https://www.instrument.com.cn/bbs/images/affix.gif[/img][url=http://www.instrument.com.cn/bbs/download.asp?ID=147380]一种用于增加制程范围的新型FFS液晶显示器件结构[/url]

yilai1002 2009/05/03

[img]https://www.instrument.com.cn/bbs/images/affix.gif[/img][url=http://www.instrument.com.cn/bbs/download.asp?ID=147848]7 A BCE-type a-Si TFT with an island metal masking structure[/url]

stsslin 2009/04/30

No.8[img]https://www.instrument.com.cn/bbs/images/affix.gif[/img][url=http://www.instrument.com.cn/bbs/download.asp?ID=147448]To Suppress UV Damage on the[/url]