显影剂中的抗蚀剂薄膜中溶解过程检测方案(白光干涉测厚)

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Film Metrology & More...For further information， please contact us at info@thetametrisis.com or sales@thetametrisis.comThetaMetrisis C 2018， www.thetametrisis.com APPLICATION NOTE #021 In situ Characterization of Photoresist film development Introduction： Characterization of photoresist dissolution process has been continuously investigated aiming theoptimization of pattering processes for future semiconductor and photonic devices. Real-time monitoring ofthedissolution can provide the essential information needed for such characterization. In this application note， real-time monitoring of the dissolution process of a resist (AR-N7520.18) film in standard developer (AZ726MIF) isbeing demonstrated by using FR-Basic Vis/NIR and FR-Liquid accessory. Means & Methods： The sample under investigation was a Si wafer spin coatedwith an AR-N7520.18 resist film. AR-N 7520 is a commercial high resolutionnegative e-beam resist by All Resist. The characterization was performed byan FR-Basic Vis/NIR operating in the>400nm spectral range， in order to avoidexposure of the resist film during the characterization， and the FR-Liquid kit.FR-Liquid is an accessory for the real time monitoring of changes， e.g. swellingor dissolution， in thickness and optical constants (n&k) of thin/thick filmsduring processing in liquids. It consists of a PTFE (Teflon) cell and a holder toaccommodate the sample under test. PTFE， due to its properties (hydrophobic，chemical and thermal resistant) make suitable the use of FR-Liquid for a widerange of liquids. Optical measurements with the FR-Basic tool are possible dueto the optical window design on the cell. Results： In Figure 1， the recorded reflectance spectrum is illustrated along with the fitted one. The environmentis set to the developer properties and the fitting is very good despite the fact that the reflection probe is mountoutside the vessel. This configuration allows the usage of any developer， since it establish the non-contact ofthe reflection probe with the liquid. At the same time， the horizontal mounting of the reflection probe and thevertical orientation of the sample under test allows for fast insertion of the sample into the developer andrecording of high intensity interference extrema. For very thin layers it is suggested to use as substrate Si waferwith dielectric layer of adequate optical thickness e.g. >500nm SiO2. In Figure 2， the evolution of the resist filmthickness， non-irradiated areas， is illustrated. Similar results can be also recorded for positive resists or anytransparent or semi-transparent polymer coating. B00 ·AR-N7520 TDD 600- 500 400- 300- 200- 100- 10 20 30 40 50 50 70 80 90100110 Time (sec) Figure 1： Reflectance and fitted spectra from an800nm thick resist film on Si wafer immersed inAZ726MIFdeveloper. Figure 2： Dissolution measurement of AR-N-7520.18resist ( lhttp：//www.allresist.com/wp-content/uploads/sites/2/2016/12/allresist_produktinfos_ar-n7520_englisch.pdf ) 光刻胶显影薄膜监测介绍：为了优化半导体和光子器件的图形制作工艺，对光刻胶溶解过程的表征进行了不断的研究。溶出度的实时监测可为此类表征提供必要的信息。在本应用中，通过使用FR-Pro VIS/NIR和FR液体附件，对标准显影剂（AZ726MIF）中的抗蚀剂（AR-N7520.18）薄膜的溶解过程进行实时监控。方法：研究样品为涂有AR-N7520.18抗蚀剂薄膜的硅片。AR-N 7520是一种商用高分辨率全电阻负电子束抗蚀剂。为了避免在表征过程中暴露在抗蚀剂薄膜和FR液体试剂盒中，通过在>400nm光谱范围内工作的FR-Pro VIS/NIR进行表征。FR液体是一种附件，用于实时监测液体中处理过程薄膜/厚膜的厚度和光学常数（n&k）的变化，例如膨胀或溶解。它由一个聚四氟乙烯（Teflon）单元和一个支架组成，以容纳被测样品。聚四氟乙烯（PTFE）由于其疏水性、耐化学性和耐热性等特性，使其适用于FR液体的广泛应用。带有光学窗口设计，方便使用FR基本工具进行光学测量。结果：记录的反射光谱与拟合的反射光谱一起显示。环境设置为显影剂属性，反射探头安装在容器外部，拟合非常好。反射探头与液体的非接触测试，因此允许使用任何显影剂。同时，反射探头的水平安装和被测样品的垂直方向允许样品快速插入显影剂并记录高强度干扰极值。              对于非常薄的层，建议使用具有足够光学厚度的介电层的衬底硅晶片，例如>500nm的二氧化硅。说明了非腐蚀区抗蚀剂膜厚度的变化。同样的结果也可以记录其他透明或半透明的聚合物涂层上。FR的工具基于白光反射光谱(Reports) 。准确同步的厚度测量及薄膜的折射率-一个广泛的多样化的应用范围广泛的光电特性的工具和整体解决方案，如:半导体、有机电子、聚合物、涂料和涂料、光伏、生物传感、化学传感...