【序号】：1 【作者】：N. A. Torkhov 【题名】：Formation of a native-oxide structure on the surface of n-GaAs under natural oxidation in air 【期刊】：Semiconductors 【年、卷、期、起止页码】 ： October 2003, Volume 37, Issue 10, pp 1177-1184 【链接】：http://link.springer.com/article/10.1134%2F1.1619513 【序号】：2 【作者】：Masamichi Yamada, Yuichi Ide, Kiyoshi Tone 【题名】：Interaction of atomic hydrogen with GaAs (001) surface oxide: volatile Ga-oxide formation 【期刊】：Applied Surface Science 【年、卷、期、起止页码】 ： Volumes 70-71, Part 2, 2 June 1993, Pages 531-535 【链接】： http://www.sciencedirect.com/science/article/pii/016943329390575V 【序号】：3 【作者】：B.J. Sealy, P.L.F. Hemment 【题名】：Structure and composition of native oxides on GaAs 【期刊】：Thin Solid Films 【年、卷、期、起止页码】 ： Volume 22, Issue 3, July 1974, Pages S39-S43 【链接】： http://www.sciencedirect.com/science/article/pii/0040609074903101 【序号】：4 【作者】：E.P. Donovan, D.R. Brighton, G.K. Hubler, D. van Vechten 【题名】：Ion beam assisted deposition of substoichiometric silicon nitride 【期刊】：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 【年、卷、期、起止页码】 ： Volumes 19-20, Part 2, 1987, Pages 983-986 【链接】： http://www.sciencedirect.com/science/article/pii/S0168583X87801969 【序号】：5 【作者】：Liu Xianghuai, Yu Yuehui, Zheng Zhihong, Huang Wei, Zou Shichang, Jin Zuqing, Chang Ming, Xu Shoulian, S. Taniguchi, T. Shibata, K. Nakamura 【题名】：Properties and structure of silicon nitride films synthesized by ion-beam-enhanced deposition 【期刊】：Surface and Coatings Technology 【年、卷、期、起止页码】 ： Volume 46, Issue 2, July 1991, Pages 227-232 【链接】： http://www.sciencedirect.com/science/article/pii/025789729190165S
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