To acquire information about the degree of in-plane lattice mismatch, reciprocal lattice scans were carried out around the asymmetric GaN （10－15）reflex. For the sample discussed in Fig. 1, the reciprocal lattice mapping is shown in Fig. 3. The number h represents the in-plane lattice vector. Indeed, the lattice mismatch between the GaN substrate and the 100 nm thick InAlN is smaller than 0.1%. 请大家帮我解释一下这种测试方法，并解释一下这个图 谢谢了！
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