仪器对比
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冷场发射
0.4nm@30kV,1.2nm@1kV
220~8,000,000
0.5~30kV
0
日立高新超高分辨率场发射扫描电子显微镜SU9000是专门为电子束敏感样品和需最大300万倍稳定观察的先进半导体器件，高分辨成像所设计。
新的电子枪和电子光学设计提高了低加速电压性能。
0.4nm / 30kV（SE）
1.2nm / 1kV（SE）
0.34nm / 30kV（STEM）
用改良的高真空性能和无与伦比的电子束稳定性来实现高效率截面观察。
采用全新设计的Super E x B能量过滤技术，高效，灵活地收集SE / BSE/ STEM信号。
The world's highest SE resolution at 30kV: 0.4nm at 30kV guaranteed 0.34nm STEM resolution guaranteed, allows observation of graphite C(002) lattice fringes 1.2nm SE resolution at 1kV guaranteed without need for beam deceleration technology. This assures quick time to results as any sample geometry can be observed with ease 0.8nm SE resolution @ 1kV with optional beam deceleration Usable magnification up to 3.000.000 times Hitachi's unique variable Super ExB signal mode in combination with 2 through-the-lens detectors allows operator to optimize secondary and backscatter signal content of the image. New BF/DF Duo-STEM detector allows simultaneous display of BF and DF images. Variable detection angle in DF STEM mode (option). Possibility of simultanous 4-signal live display (SE+BSE, BF+DF STEM) Next-generation cold field emission gun provides 2x higher and stable probe current Electron optical design allows EDS analysis and imaging without changing specimen position. FIB compatible holders for seamless imaging of targeted preparation sites (option). Cross section sample holder compatibility to Hitachi IM4000 ion beam cross section polisher (option) Cryogenic observation with cryo sample holder (option)
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