第5楼2005/11/23
根据你的叙述好象就是原位加热装置!能详细点,或列举一个具体的例子。你的仪器上不是有加热吗?
[/quote]
因为我没有做过,所以我不知道我们怎么用,但是我觉得应该象这样的:The PHI 5000C ESCA system was modified for the XPS experiments. First, it was equipped with a pretreatment chamber for the sample degassing or prereaction, second, an Ar+ sputtering gun was assembled for depth profiling, third, a high-temperature 5-dimensional specimen manipulator supplied a temperature on the sample of up to 800 K, and last, pure oxygen could be introduced to the sample surface through an O2 doser which could be moved about 5mmfrom the sample in order to increase the exposing efficiency. After fixing it to the sample holder, the sample was transferred to the pretreatment chamber immediately.In there the sample was degassed under 1*10-6
Torr for4htoremove the volatile contaminants. Then the sample
was transferred without contacting the atmosphere into the
analyzing chamber in which sample heating can be achieved by
using an electric resistance heater through a tantalum slice
equipped in the manipulator.AWRe3/WRe25 thermocouple was
attached to the back of the sample for temperature measurement
and control. After the sample was slightly sputtered to remove
some involatile contaminants, exposure to O2 was performed
while holding the sample at a certain temperature. XPS depth
profiling was carried out by using an ion sputtering gun operated
at 3.0 kV, 10 mA, and 5 *10-5 Pa of Ar to give a nominal
sputtering rate of 2 Å/min, as calibrated via a Ta2O5 standard.
The surface composition was obtained by fitting the XPS spectra
of the corresponding elements in the alloys by considering their
sensitivity factors. In the fitting, a Gaussian-Lorentzian line
shape is employed assuming a linear background.
还有您能告诉我这是什么意思吗?a Gaussian-Lorentzian line shape