【序号】：1 【作者】：Noboru Negoro, Seiya Kasai, Hideki Hasegawa 【题名】：Scanned-probe topological and spectroscopic study of surface states on clean and Si-deposited GaAs (0 0 1)-c(4×4) surfaces 【期刊】：Applied Surface Science 【年、卷、期、起止页码】 ： Volume 190, Issues 1-4, 8 May 2002, Pages 269-274 【链接】：http://www.sciencedirect.com/science/article/pii/S0169433201008650 【序号】：2 【作者】：K. Martens, W.F. Wang, A. Dimoulas, G. Borghs, M. Meurisa, G. Groeseneken, H.E. Maesa 【题名】：Determining weak Fermi-level pinning in MOS devices by conductance and capacitance analysis and application to GaAs MOS devices 【期刊】：Solid-State Electronics 【年、卷、期、起止页码】 ： Volume 51, Issue 8, August 2007, Pages 1101-1108 【链接】：http://www.sciencedirect.com/science/article/pii/S0038110107001967 【序号】：3 【作者】：Patrick Casey, Greg Hughes 【题名】：Interfacial analysis of InP surface preparation using atomic hydrogen cleaning and Si interfacial control layers prior to MgO deposition 【期刊】：Applied Surface Science 【年、卷、期、起止页码】 ： Volume 256, Issue 24, 1 October 2010, Pages 7530-7534 【链接】：http://www.sciencedirect.com/science/article/pii/S0169433210008032 【序号】：4 【作者】：Zhou Jiankun, Chen Youshan, Liu Xianghuai, Zou Shichang 【题名】：Computer simulation of ion beam enhanced deposition of silicon nitride films 【期刊】：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 【年、卷、期、起止页码】 ： Volume 39, Issues 1-4, 2 March 1989, Pages 182-184 【链接】：http://www.sciencedirect.com/science/article/pii/0168583X89907672 【序号】：5 【作者】：Liu Xianghuai, Yu Yuehui, Zheng Zhihong, Huang Wei, Zou Shichang, Jin Zuqing, Chang Ming, Xu Shoulian, S. Taniguchi, T. Shibata, K. Nakamura 【题名】：Properties and structure of silicon nitride films synthesized by ion-beam-enhanced deposition 【期刊】：Surface and Coatings Technology 【年、卷、期、起止页码】 ： Volume 46, Issue 2, July 1991, Pages 227-232 【链接】：http://www.sciencedirect.com/science/article/pii/025789729190165S
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