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Hesper Ⅱ E630R plus 12英寸减压选择性外延系统
1、多区红外加热协同激光微区补偿，温场均匀可控
Multi-zone infrared heating coordinated with laser micro-zone compensation, the temperature field is uniform and controllable
2、高精度温控系统设计，工艺稳定性及重复性可控优良
High precision temperature control system design, excellent process stability and repeatability
3、主、辅助、交叉气路配合独特气流场设计及优良的压力控制系统，气流场均匀可控
The main, auxiliary and cross gasline combined with unique flow field design and excellent pressure control system, the flow field is uniform and controllable
4、高效传输算法，腔室利用率 >99.8%
Efficient transmission algorithm, chamber utilization >99.8%
技术参数 Technical Parameters
1、晶圆尺寸 12 英寸
Wafer size 12"
2、 适用材料 硅
Applicable material Si
3、适用工艺 锗硅、磷硅、硅选择性减压外延
Applicable process SiGe, SiP, Si reduced pressure selective epitaxy
4、适用领域 科研、集成电路
Applied field R&D, IC
60天
1年
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